New, process tolerant, high performance 1.55 μm polarization insensitive semiconductor optical amplifier based on low tensile bulk GaInAsP

European Conference on Optical Communication, ECOC

Volumn 3, Issue , 1996, Pages

  Emery, J Y ^a   Doussiere, P ^a   Goldstein, L ^a   Pommereau, F ^a   Fortin, C ^a   Ngo, R ^a   Tscherptner, N ^a   Lafragette, J L ^a   Aubert, P ^a   Brillouet, F ^a   Laube, G ^a   Barrau, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS;

POLARIZATION INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIERS (SOA); SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH);

SEMICONDUCTOR LASERS;

EID: 0030312577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)