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Volumn 33, Issue 25, 1997, Pages 2139-2141

DC 30GHz bandwidth and 36dB gain limiting amplifier for 40Gbit/s optical transmission systems

Author keywords

Amplifiers; Optical communication equipment

Indexed keywords

BANDWIDTH; ELECTRONIC EQUIPMENT MANUFACTURE; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031553140     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971460     Document Type: Article
Times cited : (5)

References (7)
  • 1
    • 0030213937 scopus 로고    scopus 로고
    • Design considerations for very-high-speed Si-bipolar ICs operating up to 50Gb/s
    • REIN, H.-M.: 'Design considerations for very-high-speed Si-bipolar ICs operating up to 50Gb/s'. IEEE J. Solid-State Circuits, 1996, 31, (8), pp. 1076-1090
    • (1996) IEEE J. Solid-State Circuits , vol.31 , Issue.8 , pp. 1076-1090
    • Rein, H.-M.1
  • 4
    • 0031121765 scopus 로고    scopus 로고
    • 60Gbit/S time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
    • MÜLLER, M., REIN, H.-M., FELD, A., and MEISTER, T.F.: '60Gbit/S time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique', Electron. Lett., 1997, 33, (8), pp. 679-680
    • (1997) Electron. Lett. , vol.33 , Issue.8 , pp. 679-680
    • Müller, M.1    Rein, H.-M.2    Feld, A.3    Meister, T.F.4
  • 5
    • 0029485860 scopus 로고
    • Novel distributed baseband amplifying techniques for 40Gbit/s optical communication
    • KIMURA, S., IMAI, Y., and MIYAMOTO, Y.: 'Novel distributed baseband amplifying techniques for 40Gbit/s optical communication'. GaAs IC Symp. Tech. Dig., 1995, pp. 193-196
    • (1995) GaAs IC Symp. Tech. Dig. , pp. 193-196
    • Kimura, S.1    Imai, Y.2    Miyamoto, Y.3
  • 7
    • 0003118332 scopus 로고
    • E-Beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
    • HÜLSMANN, A., KAUFEL, G., KÖHLER, K., RAYNOR, B., SCHNEIDER, J., and JAKOBUS, T.: 'E-Beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits', Jpn. J. Appl. Phys., 1990, 29, (10), pp. 2317-2320
    • (1990) Jpn. J. Appl. Phys. , vol.29 , Issue.10 , pp. 2317-2320
    • Hülsmann, A.1    Kaufel, G.2    Köhler, K.3    Raynor, B.4    Schneider, J.5    Jakobus, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.