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Volumn 172, Issue 1-2, 1997, Pages 1-4
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Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino) phosphine
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Author keywords
[No Author keywords available]
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Indexed keywords
EFFECTS;
EPITAXIAL GROWTH;
INDIUM COMPOUNDS;
PHOSPHORUS;
PYROLYSIS;
SURFACES;
CRACKER CELL TEMPERATURE;
GROWTH TEMPERATURES;
PRECRACKING;
TERTIARYBUTYLBIS PHOSPHINE;
CHEMICAL BEAM EPITAXY;
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EID: 0031546780
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00422-8 Document Type: Article |
Times cited : (2)
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References (16)
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