A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE system

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 697-703

  Kimura, M ^a   Dost, S ^a,b   Udono, H ^a   Tanaka, A ^a   Sukegawa, T ^a   Qin, Z ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF VICTORIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DIFFUSION IN SOLIDS; FINITE ELEMENT METHOD; LIQUID PHASE EPITAXY; MASS TRANSFER; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PHASE DIAGRAMS; PHASE INTERFACES; SUBSTRATES;

CONVERSION PHENOMENON; MASS TRANSPORT EQUATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030566440     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00463-0     Document Type: Article

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