Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 350-354

  Kobayashi, N ^a   Zhu, D H ^a,c   Hasegawa, M ^a   Katsumata, H ^a,b   Tanaka, Y ^a   Hayashi, N ^a   Makita, Y ^a   Shibata, H ^a   Uekusa, S ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; LIGHT MEASUREMENT; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY CRYSTALLOGRAPHY;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); SOLID PHASE EPITAXIAL GROWTH (SPEG);

SILICON CARBIDE;

EID: 0031547799     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00955-X     Document Type: Article

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