The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 55-58

  Brown, R A ^a   Kononchuk, O ^a   Radzimski, Z ^a   Rozgonyi, G A ^a   Gonzalez, F ^b  

^a North Carolina State University   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); DOSIMETRY; ETCHING; ION IMPLANTATION; OPTICAL MICROSCOPY; OXYGEN; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

FLOAT ZONE WAFERS; SECONDARY DEFECT FORMATION;

SILICON WAFERS;

EID: 0031547682     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00848-8     Document Type: Article

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