ZnSe epitaxial growth on Si(100) and Ge(100) by H-radical assisted MOCVD

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 23-27

  Aoki, Toru ^a   Morita, Motohiko ^a   Noda, Daiji ^a   Nakanishi, Yoichiro ^a   Hatanaka, Yoshinori ^a   Azuma, Naoto ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Crystal growth; Radical assisted MOCVD; Surface structure; ZnSe on Ge; ZnSe on Si

Indexed keywords

FREE RADICALS; HYDROGEN; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

NON POLAR SUBSTRATES; ZINC SELENIDE;

EPITAXIAL GROWTH;

EID: 0031547325     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00813-6     Document Type: Article

References (7)

1. K. Ohokawa, T. Karasawa and T. Mitsuyu, Jpn. J. Appl. Phys. 30 (1991) L152.
2. K. Hirabayashi and O. Kogure, Jpn. J. Appl. Phys. 24 (1985) 1590.
3. T. Aoki, M. Morita, S. Wickramanayaka, Y. Nakanishi and Y. Hatanaka, Appl. Surf. Sci. 92 (1996) 132.
4. Y. Hatanaka, T. Aoki, M. Morita and Y. Nakanishi, Appl. Surf. Sci. 100/101 (1996) 621.
5. T. Aoki, M. Morita, Y. Nakanishi and Y. Hatanaka, Electrochem. Soc. Proc. 95(5) (1996) 354.
6. R.D. Bringans, D.K. Biegelsen, L.-E. Swartz, F.A. Ponce and J.C. Tramontana, Phys. Rev. B 45 (1992) 13400.
7. L.T. Romano, R.D. Bringans, J. Knall, D.K. Biegelsen, A. Garcia and J.E. Northrup, Phys. Rev. B 50 (1994) 4416.