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Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 417-420

GaAs/Al0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)a GaAs substrates by MBE

(8) Shimomura, S a Shinohara, K a Kasahara, K a Motokawa, T a Adachi, A b Okamoto, Y c Sano, N d Hiyamizu, S a

a OSAKA UNIVERSITY (Japan)

b NISSIN ELECTRIC CO LTD (Japan)

c Res and Headquarters Kubota Ltd (Japan)

d KWANSEI GAKUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ATOMICALLY FLAT INTERFACES; RESONANT TUNNELING DIODES; VALLEY CURRENT RATIO;

TUNNEL DIODES;

EID: 0029717279 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00301-0 Document Type: Article

Times cited : (9)

References (13)

1
- 0027353908
- S. Shimomura, A. Wakejima, A. Adachi, Y. Okamoto, N. Sano, K. Murase and S. Hiyamizu, Jpn. J. Appl. Phys. 32, L1728 (1993).
- (1993) Jpn. J. Appl. Phys. , vol.32
- Shimomura, S.¹ Wakejima, A.² Adachi, A.³ Okamoto, Y.⁴ Sano, N.⁵ Murase, K.⁶ Hiyamizu, S.⁷

2
- 0001703620
- S. Hiyamizu, S. Shimomura, A. Wakejima, S. Kaneko, A. Adachi, Y. Okamoto, N. Sano and K. Murase, J. Vac. Sci. Technol. B12, 1043 (1994).
- (1994) J. Vac. Sci. Technol. , vol.B12 , pp. 1043
- Hiyamizu, S.¹ Shimomura, S.² Wakejima, A.³ Kaneko, S.⁴ Adachi, A.⁵ Okamoto, Y.⁶ Sano, N.⁷ Murase, K.⁸

3
- 0038029564
- M. Tanaka, H. Sakaki, J. Yoshino and T. Furuta, Surf. Sci. 174, 65 (1986).
- (1986) Surf. Sci. , vol.174 , pp. 65
- Tanaka, M.¹ Sakaki, H.² Yoshino, J.³ Furuta, T.⁴

4
- 0000869426
- D. Bimberg, J. Christen, T. Fukunaga, N. Nakashima, D. E. Mars and J. N. Miller, J. Vac. Sci. Technol. B5, 1191 (1987).
- (1987) J. Vac. Sci. Technol. , vol.B5 , pp. 1191
- Bimberg, D.¹ Christen, J.² Fukunaga, T.³ Nakashima, N.⁴ Mars, D.E.⁵ Miller, J.N.⁶

5
- 0029307160
- Y. Tsuda, S. Shimomura, S. Hiyamizu and N. Sano, J. Cryst. Growth 150, 415 (1995).
- (1995) J. Cryst. Growth , vol.150 , pp. 415
- Tsuda, Y.¹ Shimomura, S.² Hiyamizu, S.³ Sano, N.⁴

6
- 6244304433
- R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973).
- (1973) Appl. Phys. Lett. , vol.22 , pp. 562
- Tsu, R.¹ Esaki, L.²

7
- 36549097382
- T. J. Shewchuk, P. C. Chapin, P. D. Coleman, W. Kopp, R. Fischer and H. Morkoç, Appl. Phys. Lett. 46, 508 (1985).
- (1985) Appl. Phys. Lett. , vol.46 , pp. 508
- Shewchuk, T.J.¹ Chapin, P.C.² Coleman, P.D.³ Kopp, W.⁴ Fischer, R.⁵ Morkoç, H.⁶

8
- 0022681268
- M. Tsuchiya and H. Sakaki, Jpn. J. Appl. Phys. 25, L185 (1986).
- (1986) Jpn. J. Appl. Phys. , vol.25
- Tsuchiya, M.¹ Sakaki, H.²

9
- 0000514865
- S. Muto, T. Inata, H. Ohnishi, N. Yokoyama and S. Hiyamizu, Jpn. J. Appl. Phys. 25, L577 (1986).
- (1986) Jpn. J. Appl. Phys. , vol.25
- Muto, S.¹ Inata, T.² Ohnishi, H.³ Yokoyama, N.⁴ Hiyamizu, S.⁵

10
- 0026173891
- M. Tsuchiya and H. Sakaki, Jpn. J. Appl. Phys. 30, 1164 (1991).
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 1164
- Tsuchiya, M.¹ Sakaki, H.²

11
- 0000138026
- D. Z.-Y. Ting, S. K. Kirby and T. C. McGill, Appl. Phys. Lett. 64, 2004 (1994).
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2004
- Ting, D.Z.-Y.¹ Kirby, S.K.² McGill, T.C.³

12
- 0029309995
- S. Shimomura, S. Kaneko, T. Motokawa, K. Shinohara, A. Adachi, Y. Okamoto, N. Sano, K. Murase and S. Hiyamizu, J. Cryst. Growth 150, 409 (1995).
- (1995) J. Cryst. Growth , vol.150 , pp. 409
- Shimomura, S.¹ Kaneko, S.² Motokawa, T.³ Shinohara, K.⁴ Adachi, A.⁵ Okamoto, Y.⁶ Sano, N.⁷ Murase, K.⁸ Hiyamizu, S.⁹

13
- 0029275572
- S. Shimomura, K. Shinohara, T. Kitada, S. Hiyamizu, Y. Tsuda, N. Sano, A. Adachi and Y. Okamoto, J. Vac. Sci. Technol. B13, 696 (1995).
- (1995) J. Vac. Sci. Technol. , vol.B13 , pp. 696
- Shimomura, S.¹ Shinohara, K.² Kitada, T.³ Hiyamizu, S.⁴ Tsuda, Y.⁵ Sano, N.⁶ Adachi, A.⁷ Okamoto, Y.⁸

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