Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 125-128

  Shinohara, K ^a   Motokawa, T ^a   Kasahara, K ^a   Shimomura, S ^a   Sano, N ^b   Adachi, A ^c   Hiyamizu, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

^c NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GROWTH TEMPERATURE; PRESSURE RATIO; RESONANT TUNNELLING DIODES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029757043     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/001     Document Type: Article

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