Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVD

Journal of Crystal Growth

Volumn 115, Issue 1-4, 1991, Pages 61-64

  Fukui, Takashi ^a   Saito, Hisao ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSCOPIC EXAMINATION - TRANSMISSION ELECTRON MICROSCOPY; ORGANOMETALLICS; SUPERLATTICES;

VISCINAL SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026414645     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90712-E     Document Type: Article

References (7)

1. (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition
2. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
3. Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
4. Ideal Crystal Growth from Kink Sites on a GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition