New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 3, 1997, Pages 559-562

  Biro L P ^a,e   Gyulai, J ^a,d   Havancsak K ^b   Didyk, A Yu ^c   Bogen, S ^d   Frey, L ^d   Ryssel, H ^d  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b EÖTVÖS LORÁND UNIVERSITY   (Hungary)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^e FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ION BEAMS; ION BOMBARDMENT; KRYPTON; MONTE CARLO METHODS; SURFACE ROUGHNESS;

ELECTRONICALLY ASSISTED ELASTIC COLLISIONS; ION IRRADIATION; NUCLEAR STOPPING; SPREADING RESISTANCE DATA;

SILICON;

EID: 0031546456     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00662-3     Document Type: Article

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