Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8832-8834

  Yi, H J ^a   Diaz, J ^a   Eliashevich, I ^a   Lukas, G ^a   Kim, S ^a   Wu, D ^a   Erdthmann, M ^a   Jelen, C ^a   Slivken, S ^a   Wang, L J ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005297831     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362508     Document Type: Article

References (19)

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