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Volumn 369, Issue 6482, 1994, Pages 631-633

High-power laser diodes based on InGaAsP alloys

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GARNETS; OPTICAL PROPERTIES; RUBY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

EID: 0028452753     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/369631a0     Document Type: Article
Times cited : (53)

References (14)
  • 5
    • 84967813528 scopus 로고
    • U.S. Air Force Phillips laboratory, Diode laser technology program conference, Albuquerque, April 20-22
    • Razeghi, M. InGaAsP Diodes, U.S. Air Force Phillips laboratory, Diode laser technology program conference, Albuquerque, April 20-22 (1993).
    • (1993) InGaAsP Diodes
    • Razeghi, M.1
  • 10
    • 84055208811 scopus 로고
    • (Andrea, A. D., Lapiccirella, A., Marietta, G. & Viticoli, S.), (World Scientific, River Edge, New Jersey)
    • Razeghi, M. in Materials for Photonic Devices (eds Andrea, A. D., Lapiccirella, A., Marietta, G. & Viticoli, S.) 15 (World Scientific, River Edge, New Jersey, 1991).
    • (1991) Materials for Photonic Devices , pp. 15
    • Razeghi, M.1
  • 12
    • 84055204441 scopus 로고
    • Spectra Diode Labs, SanJose, California
    • Laser Diode Product Catalog (Spectra Diode Labs, SanJose, California, 1994).
    • (1994) Laser Diode Product Catalog


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.