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Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1533-1538

High temperature luminescence due to Er in porous Si

(6) Stepikhova, M a,b Jantsch, W a Kocher, G a Schoisswohl, M c Cantin, J L c Von Bardeleben, H J c

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD (Russian Federation)

c SORBONNE UNIVERSITÉ (France)

Author keywords

Erbium centers; PLE spectroscopy; Porous silicon

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ERBIUM; HIGH TEMPERATURE PROPERTIES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THERMODYNAMIC STABILITY;

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0031375498 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1533 Document Type: Article

Times cited : (6)

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