To probe the absorption edge of porous silicon by erbium

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 143-148

  Zhao, X ^a   Komuro, Sh ^a   Maruyama, Sh ^a   Isshiki, H ^a   Aoyagi, Y ^a   Sugano, T ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC EXCITATION; ENERGY ABSORPTION; IONS; LUMINESCENCE OF INORGANIC SOLIDS; PHOTOLUMINESCENCE; POROUS SILICON; SILICON;

ABSORPTION EDGE; ERBIUM DOPED POROUS SILICON; EXCITED CARRIERS; HOST MATERIALS; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

ERBIUM;

EID: 0030387782     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-143     Document Type: Conference Paper

References (9)