Doping Effects and Compositional Grading in AlxGa1_xAs/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 32, Issue 6, 1985, Pages 1064-1069

  Chand, Naresh ^a   Morkoc, Hadis D ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR - HETEROJUNCTIONS;

CONDUCTION-BAND EDGE; ENERGY-BAND DIAGRAMS; SPIKE BARRIERS; VALENCE-BAND DISCONTINUITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022082477     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22075     Document Type: Article

References (22)

1. H. Kroemer, “Heterostructure bipolar transistors: What should we build,” J. Vac. Sci. Technol. B, vol. 1, pp. 126–130,1983; also, “Heterojunction bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, 13-25,1982
2. H. Beneking, L. M. Su, and F. Ponse, “Medium-power GaAs bi-polar transistors,” Microelectron. J., vol. 13, pp. 5–14,1982
3. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semi-conductor Junction. New York: Academic, 1972
4. H. Ito, T. Ishibashi, and T. Sugeta, “High frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-5, 214-216,1984
5. P. M. Asbeck, D. L. Miller, R. J. Anderson, and F. H. Eisen “GaAs/(Ga, Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers,” IEEE Electron Device Lett., vol. EDL-5, pp. 310–312, 1984
6. S. L. Su, R. Fischer, W. G. Lyons, O. Tejayadi, D. Arnold, J. Klem and H. Morkoc, “Double heterojunction GaAs/A1 x Ga 1-x As bi-polar transistors prepared by molecular beam epitaxy,” J. Appl. Phys., vol. 54, pp. 6725–6731, 1983
7. P. M. Asbeck, D. L. Miller, R. Asatourian, and C. G. Kirkpatrick, “Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-3, pp. 403–406, 406, 1982
8. K. Yokoyama, M. Tomizawa, and A. Yoshi, “Accurate modeling of AlGaAs-GaAs heterostructure bipolar transistors by two-di-mensional computer simulation,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1222–1229, 1984
9. J. Lindmayer and C. Y. Wrigley, Fundamentals of Semiconductor Devices. Princeton, NJ: Van Nostrand, 1965
10. N. Chand, R. Fischer, T. Henderson, J. Klem, and H. Morkoc, “Temperature dependence of current gain in AlGaAs/GaAs hetero-junction junction bipolar transistors,” Appl. Phys. Lett., vol. 45, pp. 1086–1088, 1984
11. D. Arnold, A. Ketterson, T. Henderson, J. Klem, and H. Morkoç, “Determination of the valence band discontinuity between GaAs and (Al, Ga)A s by the use of p + GaAs-(Al, Ga)As-p - GaAs capacitors,” Appl. Phys. Lett., vol. 45, pp. 1237–1239, 1984
12. M. S. Shur and L. F. Eastman, “Ballistic and near ballistic trans-port in GaAs,” IEEE Electron Device Lett., vol. EDL-1, pp. 147–148, 148, 1980
13. W. G. Oldham and A. G. Milnes, “n-n semiconductor heterojunctions,” tions,” Solid-State Electron., vol. 6, pp. 121–132, 1963
14. D. T. Cheung, S. Y. Chiang, and G. L. Pearson, “A simplified model for graded-gap heterojunctions,” Solid-State Electron., vol. 18, pp. 263–266, 1975
15. J. R. Hayes, F. Capasso, R. J. Malik, A. C. Gossard, and W. Wieg-mann, mann, “Optimum emitter grading for heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 949–951, 1983
16. J. R. Hayes, A. C. Gossard, and W. Wiegmann, “Collector/emitter offset voltage in double-heterojunction bipolar transistors,” Electron. Lett., vol. 20, pp. 766–767, 1984
17. A. A. Grinberg, M. S. Shur, R. Fischer, and H. Morkoç, “An in-vestigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1758–1765, 1984
18. M. S. Lundstrom and R. J. Schuelke, “Numerical analysis of heterostructure semiconductor devices,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1151–1159, 1983
19. N. Chand, T. Henderson, J. Klem; W. T. Masselink, R. Fischer, Y. C. Chang, and H. Morkoç, “Comprehensive analysis of Si-doped Al x Ga 1-x As (x = 0 to 1): Theory and experiments,” Phys. Rev. B., vol. 30, 4481–4492, 1984
20. J. S. Blakem ore, Semiconductor Statistics. New York: Pergamon, 1962
21. N. Chand, R. Fischer, J. Klem, T. Henderson, P. Pearah, W. T. Masselink, Y. C. Chang, and H. Morkoç, “Beryllium and silicon doping studies in Al x Ga 1-x As and new results on persistent pho-toconductivity,” J. Vac. Sci. Technol. B, vol. 3, pp. 644–648, 1985
22. N. Chand, R. Fischer, and H. Morkoç, “On the collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors,” unpublished.