Simultaneous observation of the surface topography and current flow of PZT thin films using an atomic force microscope

Integrated Ferroelectrics

Volumn 18, Issue 1-4, 1997, Pages 71-78

  Fujisawa, Hironori ^a   Shimizu, Masaru ^a   Niu, Hirohiko ^a   Horiuchi, Toshihisa ^b   Shiosaki, Tadashi ^b   Matsushige, Kazumi ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Atomic force microscope; Conductive cantilever; Current image; Current path; Grain boundary; Pb(Zr,Ti)O3 thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; SEMICONDUCTING LEAD COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS;

CURRENT FLOW; LEAD ZIRCONIUM TITANATE; SURFACE TOPOGRAPHY;

DIELECTRIC FILMS;

EID: 0031353698     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708221687     Document Type: Article

References (20)

1. R. Waser, and M. Klee, Proceedings of 3rd International Symposium of Integrated Ferroelecirics, 1991, p.288.
2. K. Abe, and S. Komatsu, Jpn. J. Appl. Phys, 32, 4186 (1993).
3. C. A. Aroujo, L. D. McMillan, B. M. Melnick, J. D. Cuchiaro, and J. F. Scott, Ferroelectrics, 104, 241(1991).
4. J. F. Scott, C. A. Aroujo, B. M. Melnick, L. D. McMillan, and R. Zuleeg, J. Appl. Phys., 70, 382(1991).
5. B. M. Melnick, J. F. Scott, C. A. Aroujo, and L. D. McMillan, Ferroelectrics, 135, 163(1992).
6. R. Moazzami, C. Hu, and W. H. Shepherd, IEEE Electron Device Lett., 11, 454(1990).
7. R. Moazzami, C. Hu, and W. H. Shepherd, IEEE Trans. Electron Devices, 39, 2044(1992).
8. G. R. Fox, and S. B. Krupanidhi, J. Appl. Phys., 74, 1949(1993).
9. H. Hu, and S. B. Krupanidhi, J. Mater. Res., 9, 1484(1994).
10. C. Sudhama, A. C. Campbell, P. D. Manier, R. E. Jones, R. Moazzami ,C. J. Mogab, and J. C. Lee, J. Appl. Phys., 75, 1014(1994).
11. X. Chen, A. I. Kingon, L. Mantese, O. Auciello, and K. Y. Hsieh, Integrated Ferroelectrics, 3, 355(1994).
12. X. Chen, A. I. Kingon, K. Bellur, and O. Auciello, Integrated Ferroelectrics, 5, 59(1994).
13. X. Chen, A. I. Kingon, H. Al-Shreef, and K. R. Bellur, Ferroelectrics, 151, 133(1993).
14. A. Oral, S. J. Bending, and M. Henini, Appl. Phys. Lett., 69, 1324(1996).
15. F. Houze, R. Meyer, O. Schneegans, and L. Boyer, Appl. Phys. Lett., 69, 975(1996).
16. C. Lienau, A. Richter, A. Klehr, and T. Elsaesser, Appl. Phys. Lett., 69, 2471(1996).
17. R. Proksch, G. D. Skidmore, E. D. Dahlberg, S. Foss, J. J. Schmidt, C. Merton, B. Walsh, and M. Dugas, Appl. Phys. Lett., 69, 2599(1996).
18. S. Foss, R.Proksch, E. D. Dahlberg, B. Moskowitz, and B. Walsh, Appl. Phys. Lett., 69, 3426(1996).
19. K. Matsushige, K. Kobayashi, N. Iwami, T. Horiuchi, E. Shintamori, and M. Ito, Thin Solid Films, 273, 128(1996).
20. M. Shimizu, and T. Shiosaki, Mat. Res. Soc. Symp. Proc., 243, 295(1995).