SCOPUS 정보 검색 플랫폼

Volumn 25, Issue 5-7, 1996, Pages 141-223

Adsorption of group-V elements on III-V (110) surfaces

(3) Schmidt, W Gero a Bechstedt, Friedhelm a Srivastava, Gyaneshwar P b

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Adatoms; Antimony; Arsenic; Bismuth; Chemisorption; Density functional calculations; Gallium arsenide; Gallium phosphide; Indium arsenide; Indium phosphide; Low index single crystal surfaces; Phonons; Surface electronic phenomena

Indexed keywords

ADSORPTION; BISMUTH; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MONOLAYERS; PHONONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE CRYSTALS; SURFACE PHENOMENA;

DENSITY FUNCTIONAL THEORY;

SEMICONDUCTOR MATERIALS;

EID: 0030291443 PISSN: 01675729 EISSN: None Source Type: Journal
DOI: 10.1016/s0167-5729(96)00006-4 Document Type: Article

Times cited : (86)

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