The strength of indium phosphide based microstructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3008, Issue , 1997, Pages 251-257

  Greek, S ^a   Hjort, K ^a   Schweitz, J A ^a   Seassal, C ^a   Leclercq, J L ^a   Gendry, M ^a   Besland, M P ^a   Viktorovitch, P ^a   Figuet, C ^a   Souliere V ^a   Monteil, Y ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

InP; Mechanical strength; Micromechanics; MOEMS; RIE; Sublimation; Surface micromachining; Tert butanol

Indexed keywords

BENDING STRENGTH; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; MICROOPTICS; PROBABILITY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS ANALYSIS; SUBLIMATION; SURFACE TOPOGRAPHY;

MICRO-OPTO-ELECTRO-MECHANICAL (MOEM) SYSTEMS;

OPTOELECTRONIC DEVICES;

EID: 0031350165     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271420     Document Type: Conference Paper

References (16)

1. Properties of silicon
2. Properties of aluminum gallium arsenide
3. Properties of indium phosphide
4. In situ tensile strength measurement and Weibull analysis of thick film and thin film micromachined polysilicon structures