Self-organized current-density patterns and bifurcations in n-GaAs with concentric contact geometry

Physica Status Solidi (B) Basic Research

Volumn 204, Issue 1, 1997, Pages 477-480

  Hirschinger, J ^a   Niedernostheide, F J ^a,d   Prettl, W ^a   Novak V ^b   Kostial, H ^c  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b Ustav pro Elektrotechniku AV CR   (Czech Republic)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031476078     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199711)204:1<477::AID-PSSB477>3.0.CO;2-7     Document Type: Article

References (7)

1. E. SCHÖLL, Nonequilibrium Phase Transitions in Semiconductors, Springer, Berlin 1987.
2. K.M. MAYER, R. GROSS, J. PARISI, J. PEINKE, and R.P. HUEBENER, Solid State Commun. 63, 55 (1987).
3. K.M. MAYER, J. PARISI, and R.P. HUEBENER, Z. Phys. B 71, 171 (1988).
4. W. EBERLE, J. HIRSCHINGER, U. MARGULL, W. PRETTL, V. NOVÁK, and H. KOSTIAL, Appl. Phys. Lett. 68, 3329 (1996).
5. F. KAREL, J. OSWALD, J. PASTRŇÁK, and O. PETŘÍČEK, Semicond. Sci. Technol. 7, 203 (1992).
6. E.H.C. PARKER, The Technology and Physics of Molecular Beam Epitaxy, Plenum Press, New York 1985.
7. U. MARGULL, in: Self-Organization in Activator-Inhibitor-Systems: Semiconductors, Gas-Discharges and Chemical Active Media, Ed. H. ENGEL et al., p. 50-55, W & T, Berlin 1996.