Hydrogen effects on Si1-xGex/Si heteroepitaxial growth by Si2H6- and GeH4-source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7665-7668

  Okada, Masahisa ^a   Kondo, Masaaki ^a   Ikeda, Hiroya ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Hydrogen; Reflection high energy electron diffraction (RHEED); Si1 xGex epitaxial growth; Si2H6 and geh4 source molecular beam epitaxy; Surface segregation

Indexed keywords

ADSORPTION; HYDROGEN; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SURFACE SEGREGATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031345709     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7665     Document Type: Article

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