Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet

Applied Optics

Volumn 28, Issue 18, 1989, Pages 3940-3943

  Canfield, L R ^b   Kerner, Jonathan ^b   Korde, Raj ^a  

^a United Detector Technology ^*  (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84975635026     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.28.003940     Document Type: Article

References (13)

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4. E. Tegeler and M. Krumrey, “Stability of Semiconductor Photodiodes as VUV-Detectors,” Nucl. Instrum. Methods, to be published.
5. R. Korde and'J. Geist, “Stable, High Quantum Efficiency Silicon Photodiodes by Arsenic Diffusion,” Solid State Electron. 30, 8992 (1987).
6. R. Korde and J. Geist, “Quantum Efficiency Stability of Silicon Photodiodes,” Appl. Opt. 26, 5284-5289 (1987).
7. National Institute of Standards & Technology (NIST), formerly the National Bureau of Standards (NBS).
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9. R. Korde, L. R. Canfield, and B. Wallis, “Stable, High Quantum Efficiency Silicon Photodiodes for Vacuum-UV Applications,” Proc. Soc. Photo-Opt. Instrum. Eng. 932, 153-160 (1988).
10. R. C. Alig, S. Bloom, and C. W. Struck, “Scattering by Ionization and Phonon Emission in Semiconductors,” Phys. Rev. B 22, 5565-5582 (1980).
11. R. D. Ryan, “Precision Measurements of the Ionization Energy and Its Temperature Variation in High Purity Silicon Radiation Detectors,” IEEE Trans. Nucl. Sci. NS-20, 473-480 (1973).
12. E. D. Palik, Ed., Handbook of Optical Constants (Academic, New York, 1985).
13. J. A. R. Samson, Techniques of Vacuum Ultraviolet Spectroscopy (Pied Publications, Lincoln, NE, 1967).