Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

Journal of Electronic Materials

Volumn 26, Issue 12, 1997, Pages

  Decorby, R G ^a   MacDonald, R I ^a   Beaudoin, M ^a   Pinnington, T ^a   Tiedje, T ^a   Gouin, F ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GAIN MEASUREMENT; MODELS; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE; SURFACES;

ELECTRON TRAPPING; HIGH SPEED DEVICES; LOW FREQUENCY GAIN; METAL SEMICONDUCTOR METAL PHOTODETECTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE RECOMBINATION;

PHOTODETECTORS;

EID: 0031337775     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0063-2     Document Type: Article

References (17)

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