High performance Schottky contacts on Se-doped AlxGa1-xAs by cryogenic processing

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1881-1884

  He, L ^a  

^a NORTHERN ILLINOIS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYOGENICS; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT; VOLTAGE MEASUREMENT;

SCHOTTKY CONTACTS; THERMIONIC EMISSION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031337468     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00154-8     Document Type: Article

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