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Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1064-1066

Improved quality of AlxGa1-xAs grown on Se-doped AlxGa1-xAs substrate-layers by metalorganic chemical vapor deposition

(3) Lee, Kun Jing a,b Huang, Z C a,c Chen, J C a

a UNIVERSITY OF MARYLAND BALTIMORE COUNTY (United States)

b UNIVERSITY OF MARYLAND (United States)

c HUGHES STX CORPORATION (United States)

Author keywords

AlGaAs; Metalorganic chemical vapor deposition (MOCVD); Regrowth; Se doping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); MORPHOLOGY; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOTOLUMINESCENCE; QUALITY ASSURANCE; SELENIUM; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDES; CRYSTAL QUALITY; REGROWTH;

SEMICONDUCTING INTERMETALLICS;

EID: 0030180618 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02659904 Document Type: Article

Times cited : (1)

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