Current-voltage characteristics and X-Ray diffraction study of Pd/Si1-xGex Schottky contacts

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 501-505

  He, L ^a   Shi, Z Q ^b   Zheng, Y D ^c  

^a NORTHERN ILLINOIS UNIVERSITY   (United States)

^b HUGHES STX CORPORATION   (United States)

^c NANJING UNIVERSITY   (China)

Author keywords

Current voltage temperature (I V T); Schottky contacts; Si1 xGex; X ray diffraction

Indexed keywords

EID: 5844231147     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666627     Document Type: Article

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