Capacitance measurements of double-sided silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 378, Issue 1-2, 1996, Pages 284-296

  Frautschi, M A ^a,b   Hoeferkamp, M R ^a   Seidel, S C ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; DATA ACQUISITION; MATHEMATICAL MODELS; MICROSTRIP DEVICES; RADIATION DETECTORS; READOUT SYSTEMS; SIGNAL TO NOISE RATIO; SILICON SENSORS;

DETECTORS BACKPLANE CAPACITANCE; DOUBLE SIDED SILICON MICROSTRIP DETECTORS; INTERSTRIP CAPACITANCE; N SIDES; P SIDES; SECOND METAL LAYER; TOTAL CAPACITANCE;

CAPACITANCE MEASUREMENT;

EID: 0030211526     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00467-6     Document Type: Article

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