High-power high-temperature heterobipolar transistor with gallium nitride emitter

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Pankove, J I ^a   Leksono, M ^a   Chang, S S ^a   Walker, C ^a   Van Zeghbroeck, B ^b  

^a Astralux Inc   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; ROOM TEMPERATURE; VALENCE BAND BARRIERS;

ACTIVATION ENERGY; ELECTRON EMISSION; ENERGY GAP; ETCHING; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0346884783     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. J. Pankove, S. S. Chang, H. C. Lee, R. Molnar, T. D. Moustakas, B. Van Zeghbroeck., "High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain", Proc. IEDM., San Francisco, CA. Dec., 389 (1994)
2. S. S. Chang, J. Pankove, M. Leksono, B. Van Zeghbroeck, «500C Operation of a GaN/SiC Heterojunction Bipolar Transistor», Device Research Conference, paper IVB-5, Charlottesville, VA, June (1995)