Characterization of cleaved GaAs tips for scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6957-6961

  Yoshita, Masahiro ^a,b   Takahashi, Takuji ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Cleaved semiconductor tip; Fermi level pinning; Gallium arsenide; Photoresponse; Scanning tunneling microscopy; Tunneling spectroscopy

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; PHOTOELECTRICITY; SCANNING TUNNELING MICROSCOPY;

CLEAVED SEMICONDUCTOR TIPS; FERMI LEVEL PINNING; TUNNELING SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031274442     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6957     Document Type: Article

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