Laser irradiation effects on tunneling properties of n-type GaAs and InAs by scanning tunneling microscopy

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3479-3481

  Takahashi, Takuji ^a   Yoshita, Masahiro ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010579444     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115764     Document Type: Article

References (11)

1. G. Binning, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett. AIP 49, 57 (1982).
2. D. A. Bonnell, G. S. Rohrer, and R. H. French, J. Vac. Sci. Technol. B AIP 9, 551 (1991).
3. S. Akari, M. Ch. Lux-Steiner, M. Vögt, M. Stachel, and K. Dransfeld, J. Vac. Sci. Technol. B AIP 9, 561 (1991).
4. L. Q. Qian and B. W. Wessels, Appl. Phys. Lett. 58, 1295 (1991), ibid. 58, 2538 (1991).
5. T. Takahashi, M. Yoshita, and H. Sakaki, Appl. Phys. Lett. AIP 68, 502 (1996).
6. H. J. Mamin, E. Ganz, D. W. Abraham, R. E. Thompson, and J. Clarke, Phys. Rev. B 34, 9015 (1986); S. Morita, S. Tsukada, and N. Mikoshiba, Jpn. J. Appl. Phys. 26, L306 (1987); I. Tanaka, T. Kato, S. Ohkouchi, and F. Osaka, J. Vac. Sci. Technol. A 8, 567 (1990).
7. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 74-84.
8. W. Mönch, Appl. Surf. Sci. INS 22/23, 705 (1985).
9. K. E. Miyano, R. Cao, T. Kendelewicz, C. J. Spindt, P. H. Mahowald, I. Lindau, and W. E. Spicer, J. Vac. Sci. Technol. B AIP 6, 1403 (1988).
10. M. D. Pashley, K. W. Haberern, R. M. Feenstra, and P. D. Kirchner, Phys. Rev. B AIP 48, 4612 (1993).
11. M. Yamanishi, Y. Usami, Y. Kan, and I. Suemune, Jpn. J. Appl. Phys. INS 24, L586 (1985).