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Volumn 53, Issue 12, 1996, Pages 8090-8104

Photoelectrical properties of semiconductor tips in scanning tunneling microscopy

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EID: 0000151623     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.8090     Document Type: Article
Times cited : (25)

References (30)
  • 12
    • 0000151621 scopus 로고    scopus 로고
    • M.W.J. Prins, Ph.D. Thesis, University of Nijmegen, 1995
    • M.W.J. Prins, R. Jansen and H. van Kempen, following paper, Phys. Rev. B 53, 8105 (1996); M.W.J. Prins, Ph.D. Thesis, University of Nijmegen, 1995.
    • (1996) Phys. Rev. B , vol.53 , pp. 8105
    • Prins, M.1    Jansen, R.2    van Kempen, H.3
  • 16
  • 26
    • 3543145114 scopus 로고
    • An example of a statistical description of surface states in a nonilluminated Schottky diode can be found in J. Werner, K. Ploog and H.J. Queisser, Phys. Rev. Lett. 57, 1080 (1986).
    • (1986) Phys. Rev. Lett. , vol.57 , pp. 1080
    • Werner, J.1    Ploog, K.2    Queisser, H.3
  • 27
    • 0040782656 scopus 로고
    • Capacitive coupling of a photoexcited semiconductor tip has also been detected in an atomic force microscope: J. Mertz, M. Hipp, J. Mlynek and O. Marti, Appl. Phys. Lett. 64, 2338 (1994).
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 2338
    • Mertz, J.1    Hipp, M.2    Mlynek, J.3    Marti, O.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.