Monolayer-mediated deposition of tantalum(V) oxide thin film structures from solution precursors

Journal of the American Ceramic Society

Volumn 80, Issue 11, 1997, Pages 2821-2827

  Clem, Paul G ^a,b,c   Jeon, Noo Li ^a,b   Nuzzo, Ralph G ^a,b,c   Payne, David A ^a,b,c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Seitz Materials Research Laboratory   (United States)

^c AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTALLIZATION; CURRENT DENSITY; DEPOSITION; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MICROELECTRONICS; MONOLAYERS; PERMITTIVITY; SILICON; TANTALUM COMPOUNDS; THIN FILM DEVICES;

MICROCONTACT PRINTING; TANTALUM OXIDE;

DIELECTRIC FILMS;

EID: 0031273229     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1997.tb03199.x     Document Type: Article

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