6W CW front-facet power from short-cavity (0.5mm), 100μm stripe Al-free 0.98μm-emitting diode lasers

Electronics Letters

Volumn 33, Issue 24, 1997, Pages 2037-2039

  Botez, D ^a   Mawst, L J ^a   Bhattacharya, A ^a   Lopez, J ^a   Li, J ^a   Kuech, T F ^a   Iakovlev, V P ^b   Suruceanu, G I ^b   Caliman, A ^b   Syrbu, A V ^b   Morris, J ^c  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c LDX Optronics Inc   (United States)

Author keywords

Gallium indium arsenide; Semiconductor junction lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC RESISTANCE; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INTERNAL POWER DENSITY;

SEMICONDUCTOR LASERS;

EID: 0031272473     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971390     Document Type: Article

References (10)

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