Evidence for thermodynamically stable p/n junction, formed by Ag doping of (Hg,Cd) Te

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 90-93

  Lyubomirsky, Igor ^a   Lyakhovitskaya, Vera ^a   Guillemoles, Jean François ^a   Riess, Ilan ^b   Triboulet, Robert ^c   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c CNRS Lab Phys Solides de Bellevue   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

DIFFUSION COEFFICIENTS; DOPANTS; ELECTRICAL POTENTIAL GRADIENT; ELECTRONIC CARRIERS; P N JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0030121667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00616-8     Document Type: Article

References (9)

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