Influence of processing parameters on the selectivity in a CVD-process of copper using Cu(I)(hfac)(TMVS)

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 157-163

  Friese, G ^a   Abdul Hak, A ^a   Schwierzi, B ^a   Hohne U ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Copper; CVD; Metallization; Nucleation behaviour; Selectivity

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; METALLIZING; NUCLEATION; PASSIVATION; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICA; THERMAL EFFECTS; ULSI CIRCUITS;

CHAMBER PRESSURE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031270574     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00107-X     Document Type: Article

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