High-rate deposition of high-quality Cu film with LPCVD

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 541-545

  Numajiri, K ^a   Goya, T ^a   Tobe, R ^a   Okada, O ^a   Hosokawa, N ^a   Mu, C ^b   Cox, N ^b   Scott, C ^b   Yu, J ^b  

^a Canon ANELVA Technix Corporation   (Japan)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CHEMICAL REACTORS; COPPER; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY OF SOLIDS; HEATING; METALLIC FILMS; SURFACE STRUCTURE;

HEXAFLUORO ACETYLACETONATE TRIMETHYL VINYLSILANE COPPER; RESPONSE SURFACE METHODOLOGY; SINGLE WAFER CLUSTER TOOL MACHINE; SURFACE FLATNESS; THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0030564296     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00336-4     Document Type: Article

References (3)

1. J.A.T. Norman, B.A. Muratore, P.N. Dyer, D.A. Roberts and A.K. Hochberg, Proc. 8th Int. VLSI Multilevel Interconnection Conf. (1991) 123.
2. N. Misawa, S. Kishi, T. Ohba, Y. Arimoto, Y. Furumura and H. Tsutikawa, Proc. 10th Int. VLSI Multilevel Interconnection Conf. (1993) 353.
3. G.A. Petersen, J.E. Parmeter, C.A. Apblett, M.F. Gonzales and P.M. Smith, J. Electrochem. Soc. 142 (1995) 939.