What is the role of the metal on the fermi-level position at the interface with IV-IV compounds?

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 573-579

  Aubry Fortuna, V ^a   Perrossier, J L ^a   Mamor, M ^a   Meyer, F ^a   Frojdh, C ^b,c   Thungstrom, G ^b,c   Petersson, C S ^c   Bodnar, S ^d   Regolini, J L ^d  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b MID SWEDEN UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN;

METAL WORKFUNCTION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031270396     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00162-7     Document Type: Article

References (10)

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