A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs

Microelectronics Reliability

Volumn 38, Issue 1, 1998, Pages 23-27

  Vasina, P ^a   Simoen, E ^a   Claeys, C ^a   Sikula, J ^b  

^a IMEC   (Belgium)

^b BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

HOT-CARRIER (HC) STRESS; LOW-FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0031642742     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00073-5     Document Type: Article

References (14)

1. Ghibaudo, G., Roux-dit-Buisson, O. and Brini, J. Impact of scaling down on low frequency noise in silicon MOS transistors. Phys. Status Solidi (a), 1992, 132, 501-507.
2. Hu, C., Zhao, J., Li, G. P., Liu, P., Worley, E., White, J. and Kjar, R. The effects of plasma etching induced gate oxide degradation on MOSFETs 1/f noise. IEEE Electron Dev. Lett., 1995, 16, 61-63.
3. Pimbley, J. M. and Gildenblat, G. Effect of hot-electron stress on low frequency MOSFET noise. IEEE Electron Dev. Lett., 1984, 5, 345-347.
4. Fang, Z. H., Cristoloveanu, S. and Chovet, A. Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFETs. IEEE Electron Dev. Lett., 1986, 7, 371-373.
5. Cheng, C.-H. and Surya, C. The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs. Solid-State Electron., 1993, 36, 475-479.
6. Li, X., 1/f noise in MOSFETs. Ph.D. Thesis, University of Technology, Eindhoven, 1993, chapter 5.
7. Fang, Z.-H. Low-frequency pseudogeneration-recombination noise of MOSFETs stressed by channel hot electrons in weak inversion. IEEE Trans. Electron Dev., 1986, 33, 516-519.
8. Wang, Q., Brox, M., Krautschneider, W. H. and Weber, W. Explanation and model for the logarithmic time dependence of p-MOSFET degradation. IEEE Electron Dev. Lett., 1991, 12, 218-220.
9. Woltjer, R., Hamada, A. and Takeda, E. Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude. IEEE Trans. Electron Dev., 1993, 40, 392-401.
10. eff dependence of hot-carrier lifetimes of n-channel MOSFETs. IEEE Electron Dev. Lett., 1989, 11, 500-502.
11. Haddara, H. and Cristoloveanu, S. Two-dimensional modeling of locally damaged short-channel MOSFETs operating in the linear region. IEEE Trans. Electron Dev., 1987, 34, 378-385.
12. Haddara, H. S. and Cristoloveanu, S. Parameter extraction method for inhomogeneous MOSFETs locally damaged by hot carrier injection. Solid-State Electron., 1988, 31, 1573-1581.
13. Li, X., Barros, C., Vandamme, E. P. and Vandamme, L. K. J. Parameter extraction and 1/f noise in a surface and bulk-type, p-channel LDD MOSFET. Solid-State Electron., 1994, 37, 1853-1862.
14. Vandamme, E. P., Vandamme, L. K. J., Claeys, C., Simoen, E. and Schreutelkamp, R. Impact of silicidation on the excess noise behaviour of MOS transistors. Solid-State Electron., 1995, 38, 1893-1897.