Thermal simulation and characterisation of the reliability of THz Schottky diodes

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1663-1666

  Brandt, M ^a   Schußler M ^a   Parmeggiani, E ^b   Lin, C ^a   Simon, A ^a   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CURRENT DENSITY; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL STRESS;

ELECTRICAL STRESS; PULSED STRESS RELIABILITY; THERMAL SIMULATION;

SCHOTTKY BARRIER DIODES;

EID: 0031246633     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00134-0     Document Type: Article

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