Pulsed thermal characterization of a reverse biased PN-junction for ESD HBM simulation

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1711-1714

  Wolf, H ^a   Gieser, H ^b   Wilkening, W ^c  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b Fraunhofer Inst F   (Germany)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTROSTATICS; EQUIVALENT CIRCUITS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; THERMAL EFFECTS; THERMAL STRESS; COMPUTER SIMULATION; ELECTRIC DISCHARGES; STRESSES;

AVALANCHE BREAKDOWN VOLTAGE; ELECTROSTATIC DISCHARGES (ESD); HUMAN BODY MODEL (HBM); REVERSE BIASED PN JUNCTIONS; ELECTROSTATIC DISCHARGE (ESD); ELECTROTHERMAL SIMULATION; REVERSE BIASED JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0030273992     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00180-1     Document Type: Article

References (9)

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