A Low Cost and Low Power Silicon npn Bipolar Process with NMOS Transistors (ADRF) for RF and Microwave Applications

IEEE Transactions on Electron Devices

Volumn 42, Issue 10, 1995, Pages 1831-1840

  Kenneth, O ^a   Garone, Peter ^b   Tsai, Curtis ^b   Dawe, Geoff ^b   Scharf, Brad ^b   Tewksbury, Ted ^b   Kermarrec, Christian ^b   Yasaitis, John ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b ANALOG DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; COMPOSITE MATERIALS; DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC INDUCTORS; ELECTRIC SWITCHES; GATES (TRANSISTOR); MICROWAVES; MOSFET DEVICES; RADIO FREQUENCY AMPLIFIERS; RESISTORS;

LOW NOISE AMPLIFIERS; MICROWAVE APPLICATIONS; NITRIDE OXIDE COMPOSITE SPACERS; NMOS TRANSISTORS; PLASMA INDUCED DAMAGE; POLYSILICON GATES; SILICON BIPOLAR PROCESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029391707     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464412     Document Type: Letter

References (14)

1. H. Klose, R. Lachner, K. R. Schon, R. Mahnkopt, K. H. Malek, M. Kerber, H. Braun, A. V. Felde, J. Popp, O. Cohrs, E. Bertagnolli, and P. Sehrig, “B6HF: A 0.8 micron 25 GHz/25ps bipolar technology for mobile radio and ultra fast data link IC-products,” in Proc. 1993 BCTM, Minneapolis, MN, 1993, pp. 125-127.
2. D. L. Harame, K. Schonenberg, M. Gilbert, D. Nguyen-Ngoc, J. Malinowski, S. J. Jeng, B. Meyerson, J. D. Cressler, R. Grove, G. Berg, K. Tallman, K. Stein, G. Hueckel, C. Kermarrec, T. Tice, G. Fitzgibbons, K. Walter, D. Colavito, T. Houghton, N. Greco, T. Kebede, B. Cunningham, S. Subbanna, J. H. Comfort, and E. F. Crabbe, “A 200 mm SiGe-HBT technology for wireless and mixed-signal applications,” IEDM Tech. Digest, San Francisco, CA, 1994, pp. 437-440.
3. K. O. P. Garone, C. Tsai, B. Scharf, M. Higgins, D. Mai, C. Kermarrec, and J. Yasaitis, “A double-polysilicon self-aligned rcjm bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications,” in Proc. 1994 BCTM, Minneapolis, MN, 1994, pp. 221-224.
4. A. Alvarez, P. Meller, and B. Tien, “2 micron merged bipolar-CMOS technology,” IEDM Tech. Digest, San Francisco, CA, 1984, pp. 761-764.
5. T. H. Ning, R. D. Isaac, P. M. Solomon, D. D. Tang, H. N. Yu, G. Feth, and S. K. Wiedmann, “Self-aligned bipolar transistors for high performance and low-power-delay VLSI,” IEEE Trans. Electron Devices, vol. ED-28, no. 9, pp. 1010-1013, Sept. 1981.
6. P. C. Hunt and M. P. Cooke, “Process HE: A highly advanced trench isolated bipolar technology for analogue and digital applications,” in Proc. IEEE 1988 CICC, Rochester, NY, 1988, pp. 22.2.1-22.2.4.
7. K. Ehinger, E. Bertagnolli, J. Weng, R. Mahnkopt, R. Kopl, and H. Klose, “Narrow BF2 implanted bases for 35 GHz/24 ps high-speed Si bipolar technology,” IEDM Tech. Digest, Washington, DC, 1991, pp. 459-462.
8. G. S. Oehriein, G. J. Scilla, and S. J. Jeng, “Efficiency of oxygen plasma cleaning of reactive ion damaged silicon,” Appl. Phys. Lett., vol. 52, no. 11, pp. 907-909, Mar. 1988.
9. T. Yamaguchi, S. Uppili, G. Kawamoto, J. Lee, and S. Simpkins, “Process and device optimization of a 30-GHz fT submicrometer double poly-Si bipolar technology,” in Proc. 1993 BCTM, Minneapolis, MN, 1993, pp. 136-139.
10. N. H. Nguyen and R. G. Meyer, “Si IC-compatible inductors and LC passive filters,” IEEE J. Solid-State Circuits, vol. 25, no. 4, pp. 1028-1031, Aug. 1990.
11. F. Baker, J. Pfiester, T. Mele, H. H. Tseng, P. Tobin, J. Hayden, C. Gunderson, and L. Parrillo,“The influence of fluorine on threshold voltage instabilities in p+ polysilicon gated p-channel MOSFETs,” IEDM Tech. Digest, Washington, DC, 1989, pp. 443-446.
12. T. Yamaguchi and T. H. Yuzuriha, “Process integration and device performance of a submicrometer BiCMOS with 16-GHz fT double poly-bipolar devices,” IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 890-896, May, 1989.
13. C. T. Chuang, D. D. Tang, G. P. Li, and E. Hackbarth, “On the pnchthrough characteristics of advanced self-aligned bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-34, no. 7, pp. 1519-1524, July 1987.
14. S. A. Petersen and G. P. Li, “Hot carrier effects in advanced self-aligned bipolar transistors,” IEDM Tech. Digest, Washington, DC, 1985, pp. 22-24.