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Volumn 103, Issue 1, 1996, Pages 11-18
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Investigation of the silicon-plasma silicon nitride interface with in situ transient photoconductivity measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTALLINE MATERIALS;
ELECTRONIC PROPERTIES;
INTERFACES (MATERIALS);
OPTICAL VARIABLES MEASUREMENT;
PASSIVATION;
PHOTOCONDUCTIVITY;
PLASMAS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILANES;
SILICON NITRIDE;
SURFACE STRUCTURE;
INTERFACE RECOMBINATION VELOCITY;
MICROWAVE CONDUCTIVITY MEASUREMENT;
SEMICONDUCTING FILMS;
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EID: 0030244719
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(96)00471-0 Document Type: Article |
Times cited : (11)
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References (19)
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