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Volumn 103, Issue 1, 1996, Pages 11-18

Investigation of the silicon-plasma silicon nitride interface with in situ transient photoconductivity measurements

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); OPTICAL VARIABLES MEASUREMENT; PASSIVATION; PHOTOCONDUCTIVITY; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILANES; SILICON NITRIDE; SURFACE STRUCTURE;

EID: 0030244719     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00471-0     Document Type: Article
Times cited : (11)

References (19)
  • 2
    • 0345044258 scopus 로고
    • Eds. A.B. Bibyk, V.J. Kapoor and N.S. Alvi The Electrochemical Society, Pennington, NJ
    • E.H. Nicolian, in: Silicon Nitride and Silicon Dioxide Thin Insulating Films, Eds. A.B. Bibyk, V.J. Kapoor and N.S. Alvi (The Electrochemical Society, Pennington, NJ, 1989) p. 177.
    • (1989) Silicon Nitride and Silicon Dioxide Thin Insulating Films , pp. 177
    • Nicolian, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.