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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 546-550

Investigation of buffer layer of cubic GaN epitaxial films on (100) GaAs grown by metalorganic-hydrogen chloride vapor-phase epitaxy

(4) Miura, Yoshiki a Takahashi, Naoyuki a Koukitu, Akinori a Seki, Hisashi a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

Buffer layer; Cubic GaN; Gallium nitride; GaN buffer layer; MOH vapor phase epitaxy

Indexed keywords

ANNEALING; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HYDROGEN INORGANIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYER; ELECTRON DIFFRACTION MEASUREMENT; GALLIUM NITRIDE; METALLORGANIC HYDROGEN CHLORIDE VAPOR PHASE EPITAXY; X RAY PEAK;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030084656 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.546 Document Type: Article

Times cited : (7)

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