Growth of GaxIn1−xAs/InP thin layer structures by chemical beam epitaxy

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 633-637

  Leys, M R ^a   Rongen, R T H ^a   Hopkins, J ^a   Vonk, H ^a   van Es, C M ^a   Wolter, J H ^a   Tichelaar, F D ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

DOUBLE CRYSTAL X RAY DIFFRACTION; GROWTH INTERRUPTION SEQUENCE; LINEWIDTH; PHOTOLUMINESCENCE SPECTROSCOPY;

CHEMICAL BEAM EPITAXY;

EID: 0029307163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80286-L     Document Type: Article

References (12)

1. A reliable method of TEM cross section specimen preparation of YBCO films on various substrates