Self-passivated copper gates for amorphous silicon thin film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 62-69

  Sirringhaus, Henning ^a   Kahn, Antoine ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

Active matrix liquid crystal displays; Copper; Gate metallization; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CHROMIUM; COPPER OXIDES; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; METALLIC COMPOUNDS; METALLIZING; PASSIVATION; PLASMA DEPOSITION; REFRACTORY METALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON NITRIDE; SOLIDS; SURFACE SEGREGATION; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

ACTIVE MATRIX (AM); ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; CHROMIUM(III) OXIDES; CU DIFFUSION; GATE INSULATORS; GATE LINE; GATE METALLIZATION; GLASS SUBSTRATES; METAL GATES; PASSIVATION PROCESS;

COPPER;

EID: 33644550988     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270301     Document Type: Conference Paper

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