High mobility tri-layer a-Si:H thin-film transistors with ultrathin active layer

IEEE Electron Device Letters

Volumn 18, Issue 8, 1997, Pages 397-399

  Thomasson, Daniel B ^a   Jackson, Thomas N ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; ULTRATHIN FILMS;

ULTRATHIN ACTIVE LAYERS;

THIN FILM TRANSISTORS;

EID: 0031210697     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.605452     Document Type: Article

References (8)

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2. N. Ibaraki, "a-Si TFT technologies for large-size and high-pixel-density AM-LCD's," in Proc. IUMRS-ICEM'94 Symp., 1994, vol. 3, pp. 523-533.
3. D. B. Thomasson, M. Dayawansa, J. H. Chang, and T. N. Jackson, "Thin active layer a-Si:H thin-film transistors," IEEE Electron Device Lett., vol. 18, pp. 117-119, Mar. 1997.
4. S. Uchikoga, M. Akiyama, T. Koizumi, M. Ikeda, and K. Suzuki, "The effect of contact overlap distance on a-Si TFT performance," in Proc. Mater. Res. Soc. Symp., 1992, vol. 258, pp. 1025-1030.
5. N. Ibaraki, K. Fukuda, and H. Takata, "The effect of interface states on amorphous-silicon transistors," IEEE Trans. Electron Devices, vol. 36, pp. 2971-2972, Dec. 1989.
6. J. G. Shaw and M. Hack, "Simulations of short-channel and overlap effects in amorphous silicon thin-film transistors," J. Appl. Phys., vol. 65, no. 5, pp. 2124-2129, Mar. 1989.
7. Y. Katoh, O. Sugiura, Y. Takeuchi, Y. Uchida, and M. Matsumura, "Application of two-step deposition method to ultrathin a-Si FETs," in Proc. Mat. Res. Soc. Symp., 1986, vol. 70, pp. 657-662.
8. T. Kashiro, S. Kawamura, N. Imai, K. Fukuda, K. Matsumura, and N. Ibaraki, "Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process," J. Non-Cryst. Solids, vol. 198-200, pt. 2, pp. 1130-1133, May 1996.