GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity-band-conduction photodetectors

Applied Physics Letters

Volumn 68, Issue 9, 1996, Pages 1250-1252

  Martin, B G ^a   Lee, H P ^b   Jones, E W ^c  

^a Analysis Consultants   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC CONTACTS; LOW TEMPERATURE OPERATIONS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; BARRIER HEIGHT; DARK CURRENT INJECTION; IMPURITY BAND CONDUCTION; LATTICE MISMATCH;

HETEROJUNCTIONS;

EID: 0030082680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115942     Document Type: Article

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