Ion impacts and nanostructures on Ge(111), In0.22Ga0.78As/GaAs(100) and alpha quartz surfaces observed by atomic force microscopy

Surface and Interface Analysis

Volumn 24, Issue 13, 1996, Pages 881-886

  Wilson, I H ^a   Chen, Y J ^a   Xu, J B ^a   Devine, R A B ^b   Jeynes, C ^c  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b ORANGE LABS   (France)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; IONS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; QUARTZ; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SUBSTRATES;

ALPHA QUARTZ; ION IMPACTS;

ION BOMBARDMENT;

EID: 0030392616     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199612)24:13<881::AID-SIA198>3.0.CO;2-1     Document Type: Article

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