AFM study of surface morphology of high dose Co implanted Si with a MEVVA ion source

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 763-768

  Peng, Qicai ^a   Wong, S P ^a   Xu, J B ^a   Wilson, I H ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; COBALT; ION IMPLANTATION; ION SOURCES; MORPHOLOGY; SEMICONDUCTING SILICON; TEMPERATURE MEASUREMENT;

HILLOCKS; METAL VAPOR VACUUM ARC ION SOURCE; ROOT MEAN SQUARE ROUGHNESS; SUBSTRATE TEMPERATURE;

SURFACES;

EID: 0029721236     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)