Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 891-898

  Duxstad, K J ^a   Haller, E E ^a   Yu, K M ^a   Bourret, E D ^a   Lin, X W ^a,b   Ruvimov, S ^a   Liliental Weber, Z ^a   Washburn, J ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONTACTS; NICKEL; PALLADIUM; PLATINUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL PHASE; SOLID STATE REACTIONS;

PHASE INTERFACES;

EID: 0031191029     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589504     Document Type: Article

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